Electron transport in silicene

• Grant number: 12/19511-2
• Support Opportunities: Research Grants - Visiting Researcher Grant - International
• Start date: March 26, 2013
• End date: June 13, 2013
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Hai Guoqiang
• Grantee: Hai Guoqiang
• Visiting researcher: Panagiotis Vasilopoulos
• Visiting researcher institution: Concordia University , Canada
• Host Institution: Instituto de Física de São Carlos (IFSC). Universidade de São Paulo (USP). São Carlos , SP, Brazil
• City of the host institution: São Carlos

Abstract

Very recently, silecene, a one-atom thick, two-dimensional layer of silicon atoms in a honeycomb crystal structure, has been created in laboratories. This new material is similar to graphene but with a gap at the Dirac point, a linear spectrum near the K and K' points, and very strong spin-orbit interaction, is expected to open new perspectives for applications, especially due to its compatibility with existing Si-based devices. We believe that the research in silicene is just in its early infancy. It is important that we start the relevant research work as soon as possible and contribute to the understanding of silecene. In collaboration with Prof. Vasilopoulos we have started our theoretical investigations of electron transport in silicene. We expect that, during the visit of Prof. Vasilopoulos, we can prepare two manuscripts and submit them for publication. (AU)