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Electron transport in silicene

Grant number: 12/19511-2
Support type:Research Grants - Visiting Researcher Grant - International
Duration: March 26, 2013 - June 13, 2013
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Hai Guoqiang
Grantee:Hai Guoqiang
Visiting researcher: Panagiotis Vasilopoulos
Visiting researcher institution: Concordia University, Canada
Home Institution: Instituto de Física de São Carlos (IFSC). Universidade de São Paulo (USP). São Carlos , SP, Brazil

Abstract

Very recently, silecene, a one-atom thick, two-dimensional layer of silicon atoms in a honeycomb crystal structure, has been created in laboratories. This new material is similar to graphene but with a gap at the Dirac point, a linear spectrum near the K and K' points, and very strong spin-orbit interaction, is expected to open new perspectives for applications, especially due to its compatibility with existing Si-based devices. We believe that the research in silicene is just in its early infancy. It is important that we start the relevant research work as soon as possible and contribute to the understanding of silecene. In collaboration with Prof. Vasilopoulos we have started our theoretical investigations of electron transport in silicene. We expect that, during the visit of Prof. Vasilopoulos, we can prepare two manuscripts and submit them for publication. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
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