Final testing and application of a new type of ion implanter

• Grant number: 13/03245-4
• Support Opportunities: Research Grants - Visiting Researcher Grant - International
• Start date: April 21, 2013
• End date: May 03, 2013
• Field of knowledge: Physical Sciences and Mathematics - Physics - Physics of Fluids, Plasma Physics and Electrical Discharge
• Principal Investigator: Maria Cecília Barbosa da Silveira Salvadori
• Grantee: Maria Cecília Barbosa da Silveira Salvadori
• Visiting researcher: Ian Gordon Brown
• Visiting researcher institution: Lawrence Berkeley National Laboratory , United States
• Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• City of the host institution: São Paulo

Abstract

A new type of ion implanter was developed sponsored by FAPESP and will have its final tests during the visit of Prof. Ian Brown to Brazil. The tests aim to verify if the ion beam generated by the new implanter is a neutral beam, which enables implantation in insulating samples, without the accumulation of positive charges, which would lead the sample to a different potential than planned. Thus, we propose perform ion implantations using the new implanter at different energies in insulating samples. The goal is to measure the depth profile of the implantation and compare with numerical simulations performed by TRIDYN. The possible characterization methods of the samples are: RBS (Rutherford Backscattering Spectrometry), field emission gun scanning electron microscopy and transmission electron microscopy. These characterizations will be held in the coming months, after the visit of Prof. Ian Brown to Brazil. An application for the implanter in materials science will be performed modifying ceramic surface, specifically gold implantation on alumina, in order to control the electrical conductivity of the surface. The results will be compared with a theoretical model developed in our group based on percolation of metallic nanoparticles formed in polymers. A possible application for this conductive ceramic surface will be of interest for accelerators and high isolation voltage. Even as activity of Prof. Brown, during his stay in Brazil, will teach a mini course entitled "The Basics of Plasma Physics, Plasma Sources, Ion Sources, and Ion Implantation" where are planned four lectures and work to be developed in the laboratory. (AU)