| Grant number: | 13/03450-7 |
| Support Opportunities: | Regular Research Grants |
| Start date: | June 01, 2013 |
| End date: | May 31, 2015 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Felix Guillermo Gonzalez Hernandez |
| Grantee: | Felix Guillermo Gonzalez Hernandez |
| Host Institution: | Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil |
| City of the host institution: | São Paulo |
Abstract
The generation of spin currents with the application of electric fields is a subject of intense research in the field of microelectronics - a new and promising research line called spintronics that can lead to important practical applications. The spin Hall effect is an effective method to control the conduction of a spin current in a electronic device using the spin-orbit coupling. In this project we propose the study of the spin Hall effect in GaAs and InAs quantum wells doped with electrons and holes. The main focus of this proposal is to optimize the structure geometry in order to increase the spin-orbit interaction with the analysis of the effects in non-magnetic semiconductors. This goal will be obtain by time-resolved Kerr effect and transport measurements. (AU)
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