1) behavior of the graded-channel fully-depleted soi nmosfet in subthreshold regime.2) a simple leakage drain current model for accumulation-mode soi pmosfets operating up to 300oc.

• Grant number: 01/05833-3
• Support Opportunities: Research Grants - Meeting - Brazil
• Start date: September 10, 2001
• End date: September 15, 2001
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: João Antonio Martino
• Grantee: João Antonio Martino
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil