Behavior of graded channel soi gate-all-around nmosfet devices at high temperatures.

• Grant number: 04/06483-4
• Support Opportunities: Research Grants - Meeting - Brazil
• Start date: September 07, 2004
• End date: September 11, 2004
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: João Antonio Martino
• Grantee: João Antonio Martino
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil