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Investigation of Multiferroic Materials and Topological Insulators

Abstract

The objective of this proposal is to strengthen an ongoing collaboration between the Physics Department of the UFSCar in São Carlos, São Paulo, Brazil and the IMPMC and INSP Research Units of the CNRS at the University Pierre et Marie Curie - Sorbonne Universités in Paris, France. For the last two years, these two partners have been collaborating on the following vital topics of condensed matter physics: Multiferroicity and Topological insulators. In recent years, the development of advanced materials with novel electronic properties has fostered an intense [research activity covering the areas of condensed matter physics, chemistry and materials Science. Among the |most promising materials, multiferroics and topological insulators have attracted a great deal of interest, for they are promising indeed for the observation of new physical phenomena and for innovative applications in the electronics sector. We shall also emphasize the good match between the research objectives of the proposal and the complementary expertise of the two Brazilian and French partners, which should enable a fruitful and effective collaboration. Specifically, the partners have a long-standing experience in the area of materials synthesis and characterization by means of advanced thin film and high pressure techniques, thermodynamic, magnetic and transport properties measurements. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
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VEICULO: TITULO (DATA)
VEICULO: TITULO (DATA)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
DO NASCIMENTO VASCONCELOS, HUGO MENEZES; EDDRIEF, MAHMOUD; ZHENG, YUNLIN; DEMAILLE, DOMINIQUE; HIDKI, SARAH; FONDA, EMILIANO; NOVIKOVA, ANASTASIIA; FUJII, JUN; TORELLI, PIERO; SALLES, BENJAMIN RACHE; et al. Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy. ACS NANO, v. 10, n. 1, p. 1132-1138, . (14/50149-3)