Study of interface formation and control of III-V compounds grown by chemical beam epitaxy

• Grant number: 94/00538-8
• Support Opportunities: Research Projects - Thematic Grants
• Start date: January 01, 1995
• End date: December 31, 1997
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Navin Bhailalbhai Patel
• Grantee: Navin Bhailalbhai Patel
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
• Associated research grant(s): 96/00952-4 - Effect of kinetics on the nucleation of thin inas films on inp by chemical beam epitaxy., AR.EXT

Abstract

The purpose of this project is to study surface processes during Chemical Beam Epitaxy of III-V compounds. As a consequence, we intend to: a) understand the growth processes, particulary those determining the morphology and roughness of surfaces and interfaces; b) use the results to improve the state-of-the-art quality of grown heterostructures. The study of interface formation through the analysis of epitaxial growth dynamics will be carried out using atomic resolution microscopy techniques, such as atomic force and tunneling microscopies. A general view of growth processes can be outlined from this kind of analysis for a series of samples where important growth parameters are systematically varied. On the other hand, modelling growth dynamics is a complex problem since several surface processes determine the final structure. The experimental information obtained will be compared to the results of Monte Carlo simulations where all the relevant processes are included. (AU)