Graphene fabrication and graphene doping for optical applications

• Grant number: 12/07678-0
• Support type: Scholarships abroad - Research Internship - Doctorate
• Effective date (Start): November 16, 2012
• Effective date (End): November 15, 2013
• Field of knowledge: Physical Sciences and Mathematics - Physics
• Principal Investigator: Eunezio Antonio de Souza
• Grantee: Henrique Guimarães Rosa
• Supervisor abroad: Loh Kian Ping
• Home Institution: Escola de Engenharia (EE). Universidade Presbiteriana Mackenzie (UPM). Instituto Presbiteriano Mackenzie. São Paulo , SP, Brazil
• Local de pesquisa : National University of Singapore (NUS), Singapore
• Associated to the scholarship: 10/19085-8 - Study on optical properties of graphene and its aplication as saturable absorber in Erbium-doped fiber lasers, BP.DR

Abstract

Graphene, a bidimensional hexagonal lattice of carbon atoms, is a new material that has attracted physicists, chemists and engineers attentions, due to its remarkable properties. Graphene is pointed as the basis for the new generation electronics, with high-mobility electron transport and compatibility with optical and optoelectronic devices.Graphene is also a broadband absorber, due to its gapless linear Dirac-like electrons dispersion. It can be used as saturable absorber in rare-earth doped fiber lasers, enabling ultrashort pulse generation, in the femtosecond regime. Laser generating such ultrashort pulses can be applied to telecommunications WDM systems.For optical and electronic applications, graphene fabrication is a key point. Monolayer and bilayer graphene can be fabricated by CVD (Chemical Vapor Deposition) methods on Cu/SiO2 substrates. Also by CVD, graphene can be doped for Fermi-level tuning. It has direct implication on material energy gap and absorption spectrum.This project proposes the study of graphene fabrication and doping , in order to investigate materials optical properties. Optical applications in Mode-locked Erbium-doped fiber lasers are proposed. (AU)

Scientific publications

(4)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

ROSA, HENRIQUE G.; CASTANEDA, JUAN A.; BRITO CRUZ, CARLOS H.; PADILHA, LAZARO A.; GOMES, JOSE C. V.; THOROH DE SOUZA, EUNEZIO A.; FRAGNITO, HUGO L. Controlled stacking of graphene monolayer saturable absorbers for ultrashort pulse generation in erbium-doped fiber lasers. OPTICAL MATERIALS EXPRESS, v. 7, n. 7, p. 2528-2537, JUL 1 2017. Web of Science Citations: 4.

ROSA, HENRIQUE G.; STEINBERG, DAVID; ZAPATA, JUAN D.; SAITO, LUCIA A. M.; CARDENAS, ANA M.; GOMES, JOSE C. V.; DE SOUZA, EUNEZIO A. THOROH. Raman Mapping Characterization of All-Fiber CVD Monolayer Graphene Saturable Absorbers for Erbium-Doped Fiber Laser Mode Locking. Journal of Lightwave Technology, v. 33, n. 19, p. 4118-4123, OCT 1 2015. Web of Science Citations: 7.

ROMAGNOLI, PRISCILA; ROSA, HENRIQUE G.; LOPEZ-CORTES, DANIEL; SOUZA, EUNEZIO A. T.; VIANA-GOMES, JOSE C.; MARGULIS, WALTER; DE MATOS, CHRISTIANO J. S. Making graphene visible on transparent dielectric substrates: Brewster angle imaging. 2D MATERIALS, v. 2, n. 3 SEP 2015. Web of Science Citations: 6.

ROSA, HENRIQUE GUIMARAES; GOMES, JOSE CARLOS VIANA; THOROH DE SOUZA, EUNEZIO A. Transfer of an exfoliated monolayer graphene flake onto an optical fiber end face for erbium-doped fiber laser mode-locking. 2D MATERIALS, v. 2, n. 3 SEP 2015. Web of Science Citations: 10.