Study on the influence of ionizing radiation from X-rays in MOSFET

• Grant number: 13/13770-9
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: October 01, 2013
• End date: September 30, 2015
• Field of knowledge: Physical Sciences and Mathematics - Physics - Classical Areas of Phenomenology and Applications
• Principal Investigator: Marcilei Aparecida Guazzelli
• Grantee: Felipe Gustavo Hernandes Leite
• Host Institution: Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil

Abstract

Electronic devices exposed to ionizing radiation can suffer damage which alters the properties that characterize the device by modifying the electrical parameters and in the case of memories and processors, changing the information in those devices. Faced with this problem, the development of radiation-resistant electronic devices and their qualification as being more tolerant to the effects of ionizing radiation requires qualified personnel with knowledge of the specific physical mechanisms acting on the devices when exposed to radiation. To study the behavior of devices in these conditions, it is necessary to know adequately characterize it in accordance with the damage caused by a given radiation dose and the type of ionizing radiation. Note that this issue is extremely important for this strategic area of research is self-sufficient in our country. This research project aims to study the effects of ionizing radiation from X-rays in conventional electronic devices CD4007. The devices will be exposed to different dose rates of X-ray radiation by modifying the exposure time and intensity of the X-ray beam in order to study how these parameters influence the characteristics of the devices. Thus, it will be possible to correlate the physical mechanisms responsible for the effects of radiation on devices with changes in characteristic parameters, generating the capacity of electrical engineers in this strategic area for Brazil. (AU)