P-N junctions in III-V semiconductor nanowires: a platform for applied studies

• Grant number: 15/24271-9
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: March 01, 2018
• End date: February 29, 2020
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Mônica Alonso Cotta
• Grantee: Bruno César da Silva
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
• Associated research grant: 13/10957-0 - Xylella fastidiosa-vector-host plant interaction and approaches for citrus variegated chlorosis and citrus canker control, AP.TEM

Abstract

III-V semiconductor nanowires have shown potential for applications in many areas from optoelectronics to biosensing. In this project, we intend to study the growth of III-V semiconductor nanowires doped in situ to obtain P-N junctions (axial and/or radial) forming arrays, which will serve as platforms for applied studies. Our goal is, first, to contribute to the discussion in the literature about growth mechanisms and dopant incorporation in III-V nanowires grown by vapor-liquid-solid method. In order to achieve this, we intend to control the morphology and crystal structure of doped GaP nanowires (and/or InP), by finding conditions under which can grow P-N junctions with the GaP remaining in the hexagonal phase (which shows direct band gap and photoluminescence in the green spectral region). In a second step, we will seek to study the potential of these nanowires for the development of more efficiency solar cells, exploiting phenomena deriving from their small size and morphology characteristics, such a light confinement due to resonance effects according to the nanowire dimension. These arrays containing P-N junctions also will serve as a substrate for studies of the interaction between the bacterium Xylella fastidiosa and these nanosystems, which can serve as miniature probes, both for the understanding the bacterial adhesion process and for their possible as technological processes. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

DA SILVA, BRUNO CESAR; DAMASCENO COUTO, ODILON DIVINO, JR.; OBATA, HELIO; SENNA, CARLOS ALBERTO; ARCHANJO, BRAULIO SOARES; IIKAWA, FERNANDO; COTTA, MONICA ALONSO. Wurtzite Gallium Phosphide via Chemical Beam Epitaxy: Impurity- Related Luminescence vs Growth Conditions. ACS OMEGA, v. N/A, p. 8-pg., 2022-11-23. (15/16611-4, 15/24271-9, 16/16365-6, 19/07616-3, 12/11382-9)

DA SILVA, BRUNO C.; COUTO JR, ODILON D. D.; OBATA, HELIO T.; DE LIMA, MAURICIO M.; BONANI, FABIO D.; DE OLIVEIRA, CAIO E.; SIPAHI, GUILHERME M.; IIKAWA, FERNANDO; COTTA, MONICA A.. Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide. SCIENTIFIC REPORTS, v. 10, n. 1, MAY 13 2020. (16/16365-6, 12/11382-9, 15/16611-4, 15/24271-9)

DA SILVA, BRUNO C.; COUTO, ODILON D. D., JR.; OBATA, HELIO T.; DE LIMA, MAURICIO M.; BONANI, FABIO D.; DE OLIVEIRA, CAIO E.; SIPAHI, GUILHERME M.; IIKAWA, FERNANDO; COTTA, MONICA A.. Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide (vol 10, 7904, 2020). SCIENTIFIC REPORTS, v. 10, n. 1, p. 1-pg., 2020-07-09. (15/24271-9, 12/11382-9, 16/16365-6, 15/16611-4)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

SILVA, Bruno César da. Nanofios semicondutores III-V baseados em Ga: crescimento, novos catalisadores e propriedades ópticas. 2020. Doctoral Thesis - Universidade Estadual de Campinas (UNICAMP). Instituto de Física Gleb Wataghin Campinas, SP.