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P-N junctions in III-V semiconductor nanowires: a platform for applied studies

Grant number: 15/24271-9
Support Opportunities:Scholarships in Brazil - Doctorate
Effective date (Start): March 01, 2018
Effective date (End): February 29, 2020
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Mônica Alonso Cotta
Grantee:Bruno César da Silva
Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
Associated research grant:13/10957-0 - Xylella fastidiosa-vector-host plant interaction and approaches for citrus variegated chlorosis and citrus canker control, AP.TEM


III-V semiconductor nanowires have shown potential for applications in many areas from optoelectronics to biosensing. In this project, we intend to study the growth of III-V semiconductor nanowires doped in situ to obtain P-N junctions (axial and/or radial) forming arrays, which will serve as platforms for applied studies. Our goal is, first, to contribute to the discussion in the literature about growth mechanisms and dopant incorporation in III-V nanowires grown by vapor-liquid-solid method. In order to achieve this, we intend to control the morphology and crystal structure of doped GaP nanowires (and/or InP), by finding conditions under which can grow P-N junctions with the GaP remaining in the hexagonal phase (which shows direct band gap and photoluminescence in the green spectral region). In a second step, we will seek to study the potential of these nanowires for the development of more efficiency solar cells, exploiting phenomena deriving from their small size and morphology characteristics, such a light confinement due to resonance effects according to the nanowire dimension. These arrays containing P-N junctions also will serve as a substrate for studies of the interaction between the bacterium Xylella fastidiosa and these nanosystems, which can serve as miniature probes, both for the understanding the bacterial adhesion process and for their possible as technological processes. (AU)

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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
DA SILVA, BRUNO C.; COUTO JR, ODILON D. D.; OBATA, HELIO T.; DE LIMA, MAURICIO M.; BONANI, FABIO D.; DE OLIVEIRA, CAIO E.; SIPAHI, GUILHERME M.; IIKAWA, FERNANDO; COTTA, MONICA A.. Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide. SCIENTIFIC REPORTS, v. 10, n. 1, . (16/16365-6, 12/11382-9, 15/16611-4, 15/24271-9)
Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
SILVA, Bruno César da. Nanofios semicondutores III-V baseados em Ga: crescimento, novos catalisadores e propriedades ópticas. 2020. Doctoral Thesis - Universidade Estadual de Campinas (UNICAMP). Instituto de Física Gleb Wataghin Campinas, SP.

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