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Study of organic devices for application in bioelectronics

Grant number: 17/20809-0
Support type:Scholarships in Brazil - Post-Doctorate
Effective date (Start): July 01, 2019
Effective date (End): June 30, 2021
Field of knowledge:Physical Sciences and Mathematics - Physics
Principal Investigator:Carlos Frederico de Oliveira Graeff
Grantee:Miguel Henrique Boratto
Home Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil
Associated research grant:13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID


The search for improvement in data storage and processing systems as well as future integration with biological systems requires a profound investigation of non-volatile organic memories through the use of devices that emulate synaptic and neuronal functions, and are composed of flexible biocompatible components for interaction with biological tissue. Real devices simulating synapses and small neural networks have been successfully developed based on electrochemical transistors and promise a revolution in present data storage and processing. Electrochemical Organic Transistors (EOTs) are very important due to the fact of its working mechanisms and performance be similar to real brain synapses, and some of these devices have presented hundreds of conductivity states under low voltage operation. Therefore, aiming the improvement in data storage and processing, in this project the developing of EOTs based in PEDOT:PSS thin films with different concentrations of melanin is proposed. The PEDOT:PSS is a p-type semiconductor with high performance in EOTs due to its high interaction with ions at the semiconductor/electrolyte interface, and the melanin is a biopigment with ionic properties and biocompatibility for future applications in bioelectronics. Electrolytes of NaCl and KCl are interesting and present high switching speed in EOTs. In addition, memristors (resistive memories) will be developed using latex and melanin to obtain high-performance non-volatile memories.