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Development of vertical electrolyte-gated field effect transistors for UV photodetectors

Grant number: 20/12282-4
Support Opportunities:Scholarships in Brazil - Doctorate
Start date: January 01, 2021
End date: December 31, 2025
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Principal Investigator:Neri Alves
Grantee:Douglas Henrique Vieira
Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
Associated scholarship(s):23/06645-5 - Electrolyte-gated transistors fabricated on cellulose-based substrates for sustainable electronics, BE.EP.DR

Abstract

Transistor is an element of great importance for electronics, being responsible for functions such as signal amplification and switching. In the context of the electronics alternative to silicon, there is a demand for transistors that can be printed, flexible, transparent, organic or obtained by organic precursors and that can be integrated into smart packaging, ornaments or clothing. In this sense, there is a very recent approach in the literature that aims join two successful configurations, which are: electrolyte-gated transistors and the vertical transistors, resulting in the vertical electrolyte-gated field effect transistors (VEGTs). The combination of the electrolyte with the vertical architecture allows: low leakage current, increasing capacitance, obtaining a nanometer thick channel, biological and radiation sensor applications, good switching speed and reaching transconductance values as high as 814 S/m. The challenge of producing good VEGTs involves the individual study of the three main layers: intermediate electrode, semiconductor and electrolyte. There are many promising materials in this regard and the choice depends on the desired application. For photodetection of ultraviolet radiation (UV), zinc oxide (ZnO) has standing out for the possibility of being obtained from organic precursors that can be processed by solution and deposited by printing. And for deep UV photodetection, gallium oxide (Ga2O3) stands out, which can also be obtained by organic precursors and deposited by printing. As an alternative for carbon-based electrodes, graphene and carbon nanotubes has standing out, and as an alternative for dielectrics, cellulose-based electrolytes has standing out. The purpose of this doctoral project is to develop and study the printed version of VEGTs for UV photodetection, aiming better performance, physical stability, cycling and reproducibility.

News published in Agência FAPESP Newsletter about the scholarship:
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Scientific publications (18)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
NOGUEIRA, GABRIEL L.; VIEIRA, DOUGLAS H.; MORAIS, ROGERIO M.; SERBENA, JOSE P. M.; SEIDEL, KELI F.; ALVES, NERI. Sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor Based on ZnO/AgNW Schottky Contac. IEEE ELECTRON DEVICE LETTERS, v. 42, n. 12, p. 1790-1793, . (20/12282-4, 18/02037-2)
MORAIS, ROGERIO; VIEIRA, DOUGLAS HENRIQUE; KLEM, MAYKEL DOS SANTOS; GASPAR, CRISTINA; PEREIRA, LUIS; MARTINS, RODRIGO; ALVES, NERI. Printed in-plane electrolyte-gated transistor based on zinc oxide. Semiconductor Science and Technology, v. 37, n. 3, . (20/12282-4, 18/02604-4)
FERNANDES, JOSE DIEGO; MACEDO, WAGNER COSTA; VIEIRA, DOUGLAS HENRIQUE; FURINI, LEONARDO NEGRI; ALVES, NERI. Determination of the supramolecular arrangement of Dinaphtho [2,3-b:2?,3?-f]thieno[3,2-b]thiophene films fabricated by Physical Vapor Deposition and possible implications for electronic devices. Thin Solid Films, v. 772, p. 9-pg., . (20/12282-4, 14/11410-8, 14/11408-3, 13/14262-7, 18/22214-6, 20/12060-1)
MORAIS, ROGERIO MIRANDA; VIEIRA, DOUGLAS HENRIQUE; OZORIO, MAIZA DA SILVA; PEREIRA, LUIS; MARTINS, RODRIGO; ALVES, NERI. UV-Assisted Annealing Effect on the Performance of an Electrolyte-Gated Transistor Based on Inkjet Printed ZnO Nanoparticles Blended With Zinc Nitrate. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 69, n. 3, p. 7-pg., . (20/12282-4)
MORAIS, ROGERIO MIRANDA; VIEIRA, DOUGLAS HENRIQUE; OZORIO, MAIZA DA SILVA; NOGUEIRA, GABRIEL LEONARDO; ROLLO, ANDREW; KETTLE, JEFF; ALVES, NERI. Green, Biodegradable, and Flexible Resistive Heaters-Based Upon a Novel Laser-Induced Graphene Manufacturing Process. ADVANCED SUSTAINABLE SYSTEMS, v. 8, n. 10, p. 10-pg., . (20/12282-4, 22/12332-7)
DIAS, JOSE DIEGO FERNANDES; VIEIRA, DOUGLAS HENRIQUE; SERGHIOU, THEODOROS; RIVAS, CARLOS J.; CONSTANTINO, CARLOS J. L.; JIMENEZ, LILIANA B.; ALVES, NERI; KETTLE, JEFF. Influence of the Chemical Structure of Perylene Derivatives on the Performance of Honey-Gated Organic Field-Effect Transistors (HGOFETs) and Their Application in UV Light Detection. ACS APPLIED ELECTRONIC MATERIALS, v. N/A, p. 12-pg., . (20/12282-4, 13/14262-7, 18/02604-4, 22/14423-0)
BERTOLDO, LUIS H. T.; NOGUEIRA, GABRIEL L.; VIEIRA, DOUGLAS H.; KLEM, MAYKEL S.; OZORIO, MAIZA S.; ALVES, NERI. Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanutubes as Schottky contact. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 33, n. 18, p. 11-pg., . (18/02037-2, 21/01548-6, 18/02604-4, 20/12282-4)
OZORIO, MAIZA S.; VIEIRA, DOUGLAS H.; NOGUEIRA, GABRIEL L.; MARTIN, CIBELY S.; ALVES, NERI; CONSTANTINO, CARLOS J. L.. Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 151, p. 9-pg., . (20/12282-4, 18/22214-6)
OZORIO, MAIZA S.; RUBIRA, RAFAEL J. G.; VIEIRA, DOUGLAS H.; MARTIN, CIBELY S.; CONSTANTINO, CARLOS J. L.. Potential of electrolyte-gated transistors for anionic molecule detection: proof of concept using dye solution. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 57, n. 5, p. 8-pg., . (18/22214-6, 20/05423-0, 21/01161-4, 20/12282-4)
VIEIRA, DOUGLAS H.; NOGUEIRA, GABRIEL L.; OZORIO, MAIZA S.; FERNANDES, JOSE D.; SEIDEL, KELI F.; SERBENA, JOSE P. M.; ALVES, NERI. A performance comparison between honey and water as electrolytic dielectrics for ZnO liquid-gated transistors. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v. 129, n. 4, p. 10-pg., . (20/12282-4)
FURINI, LEONARDO NEGRI; FERNANDES, JOSE DIEGO; VIEIRA, DOUGLAS HENRIQUE; MORATO, LUIS FERNANDO DO CARMO; ALVES, NERI; CONSTANTINO, CARLOS JOSE LEOPOLDO. Combining Impedance Spectroscopy and Information Visualization Methods to Optimize the Detection of Carbendazim Using Layer-by-Layer Films. CHEMOSENSORS, v. 11, n. 4, p. 17-pg., . (20/12060-1, 20/12282-4, 18/22214-6)
VIEIRA, DOUGLAS HENRIQUE; OZORIO, MAIZA DA SILVA; NOGUEIRA, GABRIEL LEONARDO; ALVES, NERI. Impedance spectroscopy analysis of poly(3-hexylthiophene): TIPS-pentacene blends in different ratios. PHYSICA B-CONDENSED MATTER, v. 623, . (20/12282-4)
VIEIRA, DOUGLAS HENRIQUE; NOGUEIRA, GABRIEL LEONARDO; NASCIMENTO, MAYK RODRIGUES; FUGIKAWA-SANTOS, LUCAS; ALVES, NERI. Charge-trap memory effect in spray deposited ZnO-based electrolyte-gated transistors operating at low voltage. CURRENT APPLIED PHYSICS, v. 53, p. 8-pg., . (20/12282-4, 19/08019-9)
MORAIS, ROGERIO; VIEIRA, DOUGLAS HENRIQUE; GASPAR, CRISTINA; PEREIRA, LUIS; MARTINS, RODRIGO; ALVES, E. NERI. Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors. Semiconductor Science and Technology, v. 36, n. 12, . (20/12282-4)
SERGHIOU, THEODOROS; FERNANDES, JOSE DIEGO; KARTHIKEYAN, VAITHINATHAN; ASSI, DANI S.; VIEIRA, DOUGLAS HENRIQUE; ALVES, NERI; KETTLE, JEFF. Sustainable and Tunable Synaptic Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) for Light Adaptive Visual Perceptive Systems. ADVANCED FUNCTIONAL MATERIALS, v. N/A, p. 12-pg., . (20/12282-4, 13/14262-7, 22/14423-0, 20/12060-1, 18/02604-4)
VIEIRA, DOUGLAS HENRIQUE; NOGUEIRA, GABRIEL LEONARDO; MORAIS, ROGERIO MIRANDA; FUGIKAWA-SANTOS, LUCAS; SEIDEL, KELI FABIANA; ALVES, NERI. ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device. SENSORS AND ACTUATORS A-PHYSICAL, v. 347, p. 9-pg., . (19/08019-9, 20/12282-4, 18/02037-2, 18/04169-3)
VIEIRA, DOUGLAS HENRIQUE; NOGUEIRA, GABRIEL LEONARDO; MERCES, LEANDRO; BUFON, CARLOS CESAR BOF; ALVES, NERI. Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching. ADVANCED ELECTRONIC MATERIALS, v. 10, n. 6, p. 12-pg., . (20/12282-4, 18/18136-0, 22/12332-7, 17/02317-2)
FERNANDES, JOSE DIEGO; VIEIRA, DOUGLAS HENRIQUE; KLEM, MAYKEL DOS SANTOS; ALVES, NERI. Dinaphtho[2,3-b:2 & PRIME;,3 & PRIME;-f]thieno[3,2-b]thiophene photoresistor: Generation of photocarriers and charge trapping. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 165, p. 10-pg., . (20/12060-1, 13/14262-7, 20/12282-4, 18/02604-4)