Development of integrated resistors for millimeter wave applications.

• Grant number: 25/22649-6
• Support Opportunities: Scholarships abroad - Research Internship - Scientific Initiation
• Start date: February 01, 2026
• End date: February 28, 2026
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Circuits
• Principal Investigator: Gustavo Pamplona Rehder
• Grantee: Otavio Müller Ferreira
• Supervisor: Philippe Ferrari
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Institution abroad: Laboratoire Techniques De L'Informatique Et De La Microélectronique Pour L'Architecture Des Systèmes, France
• Associated to the scholarship: 24/07446-9 - Development of Integrated Resistors for Millimeter Wave Applications, BP.IC

Abstract

In millimeter waves (mmW), several unlicensed bands are being used for point-to-point communication links with very wide bandwidth. These multi-gigabit links will be crucial for the infrastructure of emerging RF, mmW and THz applications aimed at the high-speed telecommunications market (future generations of mobile communication, 6G and beyond), 77 GHz/120 GHz automotive radars, imaging and high-sensitivity radar sensors. In this context, this scientific initiation project seeks the development of integrated millimeter wave resistances in an interposer. The interposer in use is based on the low-cost MnM (metallic nanowires membrane) substrate with inherent slow wave effect. This technology is based on nanoporous dielectric membranes filled with metallic nanowires obtained through simple manufacturing processes, even at frequencies as high as or higher than 100 GHz, where the critical dimensions of the circuits are limited even in the most advanced commercial technologies (such as CMOS), making its design unfeasible. This scientific initiation work has as its main objective the development of resistors up to 200 ¿ integrated in the MnM interposer. So far, in these few months of the project, it has been possible: 1) to develop a material with sheet resistivity with 22 Ohms/square, suitable for the development of resistances; 2) develop a suitable manufacturing process for the obtention of integrated resistors; and 3) characterization of resistors up to 70 GHz. With the internship abroad, requested here, we intend to characterize resistors up to 220 GHz, model the resistor considering the possible parasitic elements and propose an optimization of the topology to reduce the parasitic components that disturb the behavior of the resistor. The internship abroad will be carried out at the TIMA Laboratory, in Grenoble, France, under the supervision of prof. Philippe Ferrari. (AU)