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RF MEMS Based on a-SiC:H and SIOxNy Obtained by PECVD at Low Temperatures

Grant number: 08/08775-3
Support type:Scholarships in Brazil - Post-Doctorate
Effective date (Start): December 01, 2008
Effective date (End): September 30, 2012
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:Marcelo Nelson Páez Carreño
Grantee:Gustavo Pamplona Rehder
Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Associated research grant:00/10027-3 - Production, characterization and applications of semiconducting and insulating, AP.TEM

Abstract

The development of MEMS, especially RF MEMS, is relatively new in Brazil, despite the fast growing promising market. Therefore, this research project aims at the development of microelectromechanical systems (MEMS) designed for radio frequency (RF) applications. This work's proposal is based on the already develop materials and processes for MEMS, improving them to allow the fabrication of MEMS that can be used in RF.This work will be developed in 3 stages:(1)development and fabrication of MEMS switches; (2) study of substrates, materials and packing for RF MEMS through the design and fabrication of simple structures that can operate in RF; and (3) fabrication and characterization of RF MEMS switches prototypes. This project will be develop at the "Grupo de Novos Materiais e Dispositivos" (GNMD) of the "Laboratório de Microeletrônica da Escola Politécnica" of the University of São Paulo, and it connected to the FAPESP thematic project "Produção, Caracterização e Aplicações de Ligas Semicondutoras e Isolantes" (Process 00/10027-3).