Growth of SiO2 films by dry thermal oxidation process for application in semiconductor devices

• Grant number: 10/07483-9
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: June 01, 2010
• End date: May 31, 2011
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: Marcos Massi
• Grantee: Daniel de Oliveira Gonçalves
• Host Institution: Divisão de Ciências Fundamentais (IEF). Instituto Tecnológico de Aeronáutica (ITA). Ministério da Defesa (Brasil). São José dos Campos , SP, Brazil

Abstract

The quality of silicon oxide layers is fundamental for the good performance of semiconductor devices. Thermal oxidation is the most used method for growth of SiO2. In this work, an oxidation furnace will be used to produce to produce silicon oxide. Silicon samples will be exposed to oxygen atmosphere varying the following parameters: temperatures (from 850 to 1110ºC), the treatment time and oxygen flow. The properties of the SiO2 films will be evaluated according to the rate of corrosion in KOH solution and their electric properties. Therefore, the best oxidation conditions will be determined for obtention SiO2 films with suitable properties to act as a mask (low corrosion rate in KOH solution) in the manufacturing of devices and as insulating layer (high resistivity) of these devices.