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| Author(s): |
Cris Adriano
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | Campinas, SP. |
| Institution: | Universidade Estadual de Campinas (UNICAMP). Instituto de Física Gleb Wataghin |
| Defense date: | 2004-09-09 |
| Examining board members: |
Carlos Manuel Giles Antunez de Mayolo;
Helio Cesar Nogueira Tolentino;
Maria José Santos Pompeu Brasil
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| Advisor: | Carlos Manuel Giles Antunez de Mayolo; Fernando Iikawa |
| Abstract | |
Thin films ofMnAs grown by molecular beam epitaxy on GaAs (001) were studied by X-ray diffraction. The magnetic properties of a thin film of MnAs are strongly affected by the elastic tensions ofthe film accomodation over the semiconductor substrate and were studied by X-ray diffraction techniques at the Brazilian National Synchrotron Laboratory .It was found that the Curie temperature for the MnAs film is dependent on the type of crystal accomodation over the substrate. In particular for a MnAs accomodation with a tilted hexagonal c-axis with respect to the GaAs (00 1) plane, the transition temperature becomes higher than the value for MnAs bulk. A detailed analysis ofthe evolution ofthe lattice parameters through the transition temperature was performed. These results contribute to the understanding of the phase coexistence in the film through more than 30°C where periodic stripes of a -MnAs (hexagonal) and b-MnAs (orthorhombic) are formed to reduce the elastic tension of the film during this first order magnetic transition. It was found that while the hexagonal c-axis lattice parameter almost does not change during the phase transition, the in-plane lattice parameter perpendicular to the c-axis strongly increases with increasing temperature. These structural results complement magnetization measurements using an in situ magneto-optical Kerr effect setup and also structural measurements under applied magnetic fields up to 3 kOe (AU) | |