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| Author(s): |
Luis Henrique Tigre Bertoldo
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | Presidente Prudente. 2023-07-26. |
| Institution: | Universidade Estadual Paulista (Unesp). Faculdade de Ciências e Tecnologia. Presidente Prudente |
| Defense date: | 2023-06-21 |
| Advisor: | Neri Alves |
| Abstract | |
Brazil is located in a region of the Earth's globe that is highly exposed to ultraviolet (UV) radiation, making monitoring exposure to this type of radiation of great technological and public health interest. To achieve this objective, a viable approach is the fabrication of printed electronic devices with materials that respond to the UV detection range and can be processed by solution. Among the available materials, zinc oxide (ZnO) stands out for being widely known and easily obtained by solution, in addition to specifically responding to the A range of ultraviolet (UVA) radiation, which is more prevalent on the Earth's surface. To enhance the ZnO sensitivity, it is possible to introduce gold nanoparticles (AuNPs) into its volume using Plasmon-Induced Charge Separation (PICS). This technique has the potential to increase the sensitivity of ZnO to UVA radiation significantly. A widely relevant electronic device in both interface studies and practical applications is the diode, considered a "quintessential" element of electronics. In this context, studies were conducted on a Schottky barrier photodiode based on ZnO with AuNPs embedded in its volume. The device containing AuNPs exhibited a rectification ratio of ~10 3 , a Schottky barrier height of 0.9 eV, and a series resistance of ~10 5 Ω. It is worth noting that the ideality factor of the standard device was 2.7, while the device with AuNPs achieved an ideality factor of 2.4, indicating that both devices exhibit predominant effects of series and parallel resistance, deviating from the thermionic emission theory. In addition, capacitance and dielectric loss measurements revealed effects attributed to the presence of gold nanoparticles, such as the occurrence of a characteristic peak in the dielectric loss curve as capacitance increased. Notably, the capacitance of the device with AuNPs when exposed to UV radiation was approximately four times higher compared to the device without nanoparticles. In summary, a highly sensitive Schottky photodiode to UVA radiation was developed by introducing AuNPs into the volume of ZnO. (AU) | |
| FAPESP's process: | 21/01548-6 - Study of a hybrid Schottky photodiode based on ZnO and PEDOT:PSS |
| Grantee: | Luís Henrique Tigre Bertoldo |
| Support Opportunities: | Scholarships in Brazil - Master |