Estudo e caracterização de filmes SIPOS para a passivação de dispositivos de potência.

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Author(s):	Eduardo dos Santos Ferreira Total Authors: 1
Document type:	Master's Dissertation
Press:	São Paulo.
Institution:	Universidade de São Paulo (USP). Escola Politécnica (EP/BC)
Defense date:	2000-04-19
Examining board members:	Nilton Itiro Morimoto; Olivier André Paul Bonnaud; Sebastião Gomes dos Santos Filho
Advisor:	Nilton Itiro Morimoto
Abstract
In this work, we present the study and the development of semi insulating polycrystalline silicon (SIPOS) thin films deposited by LPCVD, using silana and nitrous oxide, to be applied in power devices passivation. The deposition rate increaseswith the process temperature as well with the silana flow and decrease with the nitrous oxide flow. The XRD analyses showed a microcrystalline structure of the SIPOS deposited films. The RBS analyses showed an increase of the oxygenconcentration in the SIPOS thin film with the deposition temperature and nitrous oxide flow. The FTIRS showed the presence of Si-O-Si, Si-H and Si-OH bonds in the deposited SIPOS films. The MSS capacitors, made with the SIPOS films, showed anincrease of the leakage current when decreases the nitrous oxide flow. The power diodes supplied by AEGIS semicondutores Ltda., passivated with deposited SIPOS thin films showed an increase of the breakdown voltage in the range of 10%. Thedeveloped SIPOS deposition process is suitable for power devices passivation. (AU)