Full text
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| Author(s): |
Marcello Bellodi
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | São Paulo. |
| Institution: | Universidade de São Paulo (USP). Escola Politécnica (EP/BC) |
| Defense date: | 1996-12-20 |
| Examining board members: |
João Antonio Martino;
Antonio Luis Pacheco Rotondaro;
Patrick Bernard Verdonck
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| Advisor: | João Antonio Martino |
| Abstract | |
In this work was developed a study for the leakage drain current in SOI MOSFETs transistors operating at high temperature. To realize this study were used SOI nMOSFETs and SOI pMOSFETs devices which were operating in different conditions of polarization and the temperature range from room to 300°C. Was developed a methodology to obtain an empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures. Also was studied the influence of the channel length L and width W on the leakage drain current. The experimental results were validated by the two dimensional device simulator MEDICI. So, was concluded that the leakage drain current of SOI MOSFETs operating at high temperatures depends on the width channel trasistor and is proportional to l/L for channel length lower than 20µm. For channel length higher than 20µm, the current depends just on the width channel transistor. (AU) | |