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| Author(s): |
Sandro Martini
Total Authors: 1
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| Document type: | Doctoral Thesis |
| Press: | São Paulo. |
| Institution: | Universidade de São Paulo (USP). Instituto de Física (IF/SBI) |
| Defense date: | 2002-04-30 |
| Examining board members: |
Alain Andre Quivy;
Marcia Carvalho de Abreu Fantini;
Armando Corbani Ferraz;
Wagner Nunes Rodrigues;
Patrícia Lustoza de Souza
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| Advisor: | Alain Andre Quivy |
| Abstract | |
In this work, we investigated the molecular-beam-epitaxy growth as well as the optical and structural properties of InGaAs layers deposited on top of GaAs (001) substrates with different miscut angles and directions. We emphasized the investigation of the segregation of In atoms that considerably modifies the potential profile of the heterostructures and influences the characteristics of the devices based on this type of layers. A new experimental method involving the diffraction of high-energy electrons (RHEED) allowed the in-situ and real-time determination of the segregation coefficient of the In atoms and, consequently, of the compositional profile of the InGaAs layers. X-rays and low-temperature photoluminescence measurements were carried out InGaAs quantum wells and confirmed, a posterior, the results obtained by the RHEED method. It was also demonstrated that the use of vicinal substrates slight reduces the segregation effect and improves the optical properties of the layers at low temperature. (AU) | |