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| Author(s): |
José Antonio Sevidanes da Matta
Total Authors: 1
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| Document type: | Doctoral Thesis |
| Press: | São Paulo. |
| Institution: | Universidade de São Paulo (USP). Instituto de Física (IF/SBI) |
| Defense date: | 2001-02-01 |
| Examining board members: |
Ricardo Magnus Osorio Galvao;
Marcia Carvalho de Abreu Fantini;
Milton Eiji Kayama;
Mario Ueda;
Alvaro Vannucci
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| Advisor: | Ricardo Magnus Osorio Galvao |
| Abstract | |
The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device, as well as its utilization for deposition of thin semiconductor films, is described in detail. The basic theory of the relevant physical process, regarding electromagnetic wave absorption by the plasma and diagnostic, is discussed in order to provide a self-contained presentation of the subject. The growth of cubic boron nitrite and hexagonal aluminium nitrite over silicon substrates was pursued. In the first case, the experimental procedure was hindered by the impossibility to import decaborane, which was envisaged in the original project as the source of boron. The attempts to other sources were unsuccessful. In the latter case, a successful growth of polycristalins aluminium nitride was achieved, for the first time directly in a ECR plasma), to the best of our knowledge. The magnetic configuration and plasma parameters required for successful crystal growth were determined. (AU) | |