Jose Alexandre Diniz
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Universidade Estadual de Campinas (UNICAMP). Centro de Componentes Semicondutores (CCS) (Institutional affiliation for the last research proposal) Birthplace: Brazil
Jose Alexandre Diniz received the B.Sc. degree in physics, the M.Sc. degree in electrical engineering, and the Ph.D. degree in electrical engineering, all from the University of Campinas (UNICAMP), Campinas, SP, Brazil, in 1988, 1992 and 1996, respectively. Prof. Dr. Diniz worked in the Department of Semiconductors, Instruments and Photonics (DSIF) at UNICAMP as postdoctoral researcher from 1996 to 1998. During this period, he was with University of Florida, Gainnesville, FL, USA, in January 1998, as a Visiting Scientist. Since January 1999, he has been working in Center for Semiconductor Components and Nanotechnologies (CCSNano) at UNICAMP as a Researcher. Between June 2005 and June 2009, Prof. Dr. Diniz was Associate Director of CCSNano/Unicamp, and, since July 2009, is Director of CCSNano/Unicamp. Also, since September 2002, he has been working in School of Electrical and Computer Engineering (FEEC) at UNICAMP as a Professor in electronic area. In June 2007, he became Associate Professor in electronic area in FEEC/Unicamp. He has experience in microelectronics area, focusing on Micro and Nano fabrications based on MOS, MEMS, HBT and graphene technologies. (Source: Lattes Curriculum)
- Phase change heat transfer processes of high performance applied to solar energy recovery, AP.TEM
Abstract
Solar irradiation is a source of renewable energy and its use depends on the conversion of solar irradiation into heat and/or electricity. In the last two decades, the economic and environmental importance of incorporating solar energy to the energy matrix of most of countries have drastically increased. To convert solar irradiation to usable forms of energy, heat exchangers are necessa...
- SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices, AR.BR
- Infrastructure improvements in the Center for Semiconductor Components for the development of micro and nano fabrication technology, AP.RT.INST
Abstract
To increase the demands on nanotechnology, the financial supports from FAPESP projects, 2010/08822-1 (regular project) and 2009/54064-4 (thematic project), for the CCS /UNICAMP have allowed a better performance in the FIB (Focused long Beam) system and the installation of a electron beam lithography system (Raith E-line plus) that can get structures on substrates with a size of 20 nm, r...
- Design, fabrication and characterization of FinFET transistors, AP.TEM
Abstract
The goal of this project is the design, fabrication and electrical characterization of multiple gate transistors with vertical channel built on silicon-on-insulator substrate, known as FinFET. These devices are the most promising structures for the next technological generation on CMOS integrated circuits fabrication. To achieve this objective, it is being proposed a thematic network fo...
(Only some records are available in English at this moment)
- Giant Piezoresistance and electrical carriers mobility of ultra-strained silicon nanowires, BP.MS
Abstract
Mechanically stressed semiconductors present several physical properties that are of great interest for pure and applied sciences. These features are related to changes in their electrical, thermal and optical properties due to modifications in the material band diagram. Moreover, the fabrication techniques utilized to create stressed structures are of vital importance, as it presents a...
- Characterization of strained semiconductor structures by Raman spectroscopy, BP.IC
Abstract
Strain plays a critical role in the properties of many materials. In cubic crystal semiconductors, strain is a powerful tool to engineer bandstructure, providing control over band off sets, band splitting and effective masses. These physical modifications influence the thermal, optical and electrical properties of these materials. For these reasons, strain materials are applied to many ...
- Super strained semiconductor nanowires, BP.PD
Abstract
Strain plays a critical role in the properties of many materials. In cubic crystal semiconductors, strain is a powerful tool to engineer bandstructure, providing control over band off sets, band splitting and effective masses. These physical modifications influence the thermal, optical and electrical properties of these materials. For these reasons, strain materials are applied to many ...
(Only some records are available in English at this moment)
| 1 / 1 | Ongoing research grants |
| 7 / 5 | Completed research grants |
| 7 / 5 | Completed scholarships in Brazil |
| 15 / 11 | All research grants and scholarships |
| Associated processes | |
(References retrieved automatically from State of São Paulo Research Institutions)
MELO, Arline Maria. Fotometria e imageamento THz de fontes termicas e não-termicas. Tese (Doutorado) - Faculdade de Engenharia Elétrica e de Computação. Universidade Estadual de Campinas (UNICAMP). (04/07835-1)
ALMEIDA, Cassio Roberto de. Fabricação e caracterização de transistores HBT, vertical MOSFET, JNT e TFET baseados em substratos III-V com passivação por nitreto de silício. Tese (Doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação. (13/13983-2)