CV Lattes
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Universidade Estadual de Campinas (UNICAMP). Centro de Componentes Semicondutores (CCS) (Institutional affiliation for the last research proposal) Birthplace: Brazil
Jose Alexandre Diniz received the B.Sc. degree in physics, the M.Sc. degree in electrical engineering, and the Ph.D. degree in electrical engineering, all from the University of Campinas (UNICAMP), Campinas, SP, Brazil, in 1988, 1992 and 1996, respectively. Prof. Dr. Diniz worked in the Department of Semiconductors, Instruments and Photonics (DSIF) at UNICAMP as postdoctoral researcher from 1996 to 1998. During this period, he was with University of Florida, Gainnesville, FL, USA, in January 1998, as a Visiting Scientist. Since January 1999, he has been working in Center for Semiconductor Components and Nanotechnologies (CCSNano) at UNICAMP as a Researcher. Between June 2005 and June 2010, Prof. Dr. Diniz was Associate Director of CCSNano, and, between July 2010 and August 2016, he was Director of this Center. Also, since September 2002, he has been working in School of Electrical and Computer Engineering (FEEC) at UNICAMP as a Professor in electronic area. In April 2017, he became Full Professor in electronic area, and, since April 2019, he has been the Director of FEEC/Unicamp. He was vice-president of Brazilian Society of Microelectronics, between 2016 and 2020. His mean interests are ultra-thin high-k film growing, thin film deposition and etching techniques, fabrication of solid-state micromechanical structures, high speed transistors (FinFETs, HBTs and FETs based on graphene), photovoltaic cells and sensors. (Source: Lattes Curriculum)
Solar irradiation is a source of renewable energy and its use depends on the conversion of solar irradiation into heat and/or electricity. In the last two decades, the economic and environmental importance of incorporating solar energy to the energy matrix of most of countries have drastically increased. To convert solar irradiation to usable forms of energy, heat exchangers are necessary…
To increase the demands on nanotechnology, the financial supports from FAPESP projects, 2010/08822-1 (regular project) and 2009/54064-4 (thematic project), for the CCS /UNICAMP have allowed a better performance in the FIB (Focused long Beam) system and the installation of a electron beam lithography system (Raith E-line plus) that can get structures on substrates with a size of 20 nm, res…
The goal of this project is the design, fabrication and electrical characterization of multiple gate transistors with vertical channel built on silicon-on-insulator substrate, known as FinFET. These devices are the most promising structures for the next technological generation on CMOS integrated circuits fabrication. To achieve this objective, it is being proposed a thematic network form…
(Only some records are available in English at this moment)
Mechanically stressed semiconductors present several physical properties that are of great interest for pure and applied sciences. These features are related to changes in their electrical, thermal and optical properties due to modifications in the material band diagram. Moreover, the fabrication techniques utilized to create stressed structures are of vital importance, as it presents a l…
Strain plays a critical role in the properties of many materials. In cubic crystal semiconductors, strain is a powerful tool to engineer bandstructure, providing control over band off sets, band splitting and effective masses. These physical modifications influence the thermal, optical and electrical properties of these materials. For these reasons, strain materials are applied to many de…
Strain plays a critical role in the properties of many materials. In cubic crystal semiconductors, strain is a powerful tool to engineer bandstructure, providing control over band off sets, band splitting and effective masses. These physical modifications influence the thermal, optical and electrical properties of these materials. For these reasons, strain materials are applied to many de…
(Only some records are available in English at this moment)
| 1 / 1 | Ongoing research grants |
| 7 / 5 | Completed research grants |
| 7 / 5 | Completed scholarships in Brazil |
| 15 / 11 | All research grants and scholarships |
| Associated processes | |
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
SPEJO, L. B.; ARRIETA-CONCHA, J. L.; PUYDINGER DOS SANTOS, V, M.; BARROS, A. D.; BOURDELLE, K. K.; DINIZ, J. A.; MINAMISAWA, R. A.. Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires. Journal of Applied Physics, v. 128, n. 4, JUL 28 2020. Web of Science Citations: 0. (18/02598-4)
(References retrieved automatically from State of São Paulo Research Institutions)
ALMEIDA, Cassio Roberto de. Fabricação e caracterização de transistores HBT, vertical MOSFET, JNT e TFET baseados em substratos III-V com passivação por nitreto de silício. Tese (Doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação. (13/13983-2)
MELO, Arline Maria. Fotometria e imageamento THz de fontes termicas e não-termicas. Tese (Doutorado) - Faculdade de Engenharia Elétrica e de Computação. Universidade Estadual de Campinas (UNICAMP). (04/07835-1)