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Jose Alexandre Diniz

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Universidade Estadual de Campinas (UNICAMP). Centro de Componentes Semicondutores (CCS)  (Institutional affiliation for the last research proposal)
Birthplace: Brazil

Jose Alexandre Diniz received the B.Sc. degree in physics, the M.Sc. degree in electrical engineering, and the Ph.D. degree in electrical engineering, all from the University of Campinas (UNICAMP), Campinas, SP, Brazil, in 1988, 1992 and 1996, respectively. Prof. Dr. Diniz worked in the Department of Semiconductors, Instruments and Photonics (DSIF) at UNICAMP as postdoctoral researcher from 1996 to 1998. During this period, he was with University of Florida, Gainnesville, FL, USA, in January 1998, as a Visiting Scientist. Since January 1999, he has been working in Center for Semiconductor Components and Nanotechnologies (CCSNano) at UNICAMP as a Researcher. Between June 2005 and June 2010, Prof. Dr. Diniz was Associate Director of CCSNano, and, between July 2010 and August 2016, he was Director of this Center. Also, since September 2002, he has been working in School of Electrical and Computer Engineering (FEEC) at UNICAMP as a Professor in electronic area. In April 2017, he became Full Professor in electronic area, and, since April 2019, he has been the Director of FEEC/Unicamp. He was vice-president of Brazilian Society of Microelectronics, between 2016 and 2020. His mean interests are ultra-thin high-k film growing, thin film deposition and etching techniques, fabrication of solid-state micromechanical structures, high speed transistors (FinFETs, HBTs and FETs based on graphene), photovoltaic cells and sensors. (Source: Lattes Curriculum)

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Scientific publications resulting from Research Grants and Scholarships under the grantee's responsibility (1)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

SPEJO, L. B.; ARRIETA-CONCHA, J. L.; PUYDINGER DOS SANTOS, V, M.; BARROS, A. D.; BOURDELLE, K. K.; DINIZ, J. A.; MINAMISAWA, R. A.. Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires. Journal of Applied Physics, v. 128, n. 4, . Web of Science Citations: 0. (18/02598-4)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

ALMEIDA, Cassio Roberto de. Fabricação e caracterização de transistores HBT, vertical MOSFET, JNT e TFET baseados em substratos III-V com passivação por nitreto de silício. Tese (Doutorado) -  Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação.  (13/13983-2

MELO, Arline Maria. Fotometria e imageamento THz de fontes termicas e não-termicas. Tese (Doutorado) -  Faculdade de Engenharia Elétrica e de Computação.  Universidade Estadual de Campinas (UNICAMP).  (04/07835-1

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