PhD Student at Centro Universitário FEI. In my project, I study Fully Depleted Silicon-on-Insulator (FDSOI) devices, a semiconductor technology known for its low power consumption and high efficiency. I will investigate the behavior of two main types of transistors: UTBBs (Ultra-Thin Body and BOX) and seven-level stacked transistors. Both will be studied under extreme temperatures, ranging from cryogenic to high temperatures, and under different substrate biasing conditions.Throughout my journey, I have been recognized with several awards. Among them, the Best Student Award, granted by CREA-SP and the Institute of Engineering, and the Undergraduate Student Fellowship, an honor awarded by the IEEE Electron Devices Society for my academic performance and research contributions. (Source: Lattes Curriculum)
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The constant miniaturization of MOS transistors has hindered the use of traditional technologies in Si substrates, due to the occurrence of short channel effects, which degrade the electrical characteristics of the transistors. The manufacturing technology of integrated circuits (ICs) in SOI wafers has been constituted as an important alternative to conventional CMOS technology, in the pr…
Currently, most electronic circuits use field effect transistors built according to Metal-Oxide-Semiconductor (MOSFET) technology. Scaling semiconductor devices consists of reducing the dimensions of MOS transistors and interconnections in integrated circuits (ICs), allowing for higher density of integration, higher speed and lower power consumption. From an economic point of view, the re…
| 2 / 2 | Completed scholarships in Brazil |
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