The electrodeposition of Ga-doped CuInSe2 thin film in the presence of Triton 100-X

Author(s)

Lucas, F. Willian de S. ^[1] ; Lima, Alan R. F. ^[1] ; Mascaro, Lucia H. ^[1]

Affiliation

^[1] Univ Fed Sao Carlos, Dept Chem, BR-13565905 Sao Carlos, SP - Brazil

• Document type: Journal article
• Source: Electrochimica Acta; v. 147, p. 47-53, NOV 20 2014.
• Web of Science Citations: 4

Abstract

The codeposition of Cu, In, Ga and Se from pH 1.5 at Na2SO4/H2SO4 solution onto fluorine doped tin oxide (FTO) was studied. The effects of Triton 100-X as a noncomplexing and nonionic additive in the electrodeposition process was evaluated. At optimised experimental conditions was possible to obtain of Ga-doped CuInSe2 films (CIGSe). The films presented two different morphologies, one layer formed by globular structures and another layer constituted of lamellar clusters. The major phase in the films was CIGSe, but binary phases as InSe and CuSe were also identified. The value of the band gap was at about 1.35 eV for all the films. It was observed that the additive presence in electrolytic bath reduces the number of surface defects and increases the crystallinity and purity of the electrodeposited CIGSe. (C) 2014 Published by Elsevier Ltd. (AU)

• FAPESP's process: 08/57872-1 - National Institute for Materials Science in Nanotechnology
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Projects - Thematic Grants
• FAPESP's process: 12/10947-2 - Preparation and characterization of MBSe thin films (M = Ag or Cu; B = In, Ga, Sb or Tl; and S = S or Se) for application in photovoltaic cells
• Grantee: Francisco Willian de Souza Lucas
• Support Opportunities: Scholarships in Brazil - Doctorate
• FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC