Evidence for resonant scattering of electrons by spin fluctuations in LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition

Author(s)

Sergeenkov, S. ^[1] ; Cichetto, Jr., L. ^{[2, 3, 4]} ; Longo, E. ^{[3, 4]} ; Araujo-Moreira, F. M. ^[2]

Affiliation

^[1] Univ Fed Paraiba, CCEN, Dept Fis, BR-58051970 Joao Pessoa, Paraiba - Brazil

^[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[3] Univ Fed Sao Carlos, Dept Chem, LIEC, BR-13565905 Sao Carlos, SP - Brazil

^[4] Univ Estadual Paulista, UNESP, Inst Chem, BR-14801907 Araraquara, SP - Brazil

• Document type: Journal article
• Source: JETP LETTERS; v. 102, n. 6, p. 383-386, SEP 2015.
• Web of Science Citations: 5

Abstract

We present measurements of resistivity rho in highly oriented LaNiO3 films grown on LaAlO3 substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal rho(T) ae T (3/2) dependence for the entire temperature interval (20 K T 300 K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy h omega (sf) a parts per thousand integral 2.1 meV) triggered by spin-density wave propagating through the interface boundary of LaNiO3/LaAlO3 sandwich. (AU)

• FAPESP's process: 14/01371-5 - Obtention of memories with LaNiO3 and LaNiO3/BaTiO3 using PLD
• Grantee: Leonélio Cichetto Junior
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC