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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Evidence for resonant scattering of electrons by spin fluctuations in LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition

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Sergeenkov, S. [1] ; Cichetto, Jr., L. [2, 3, 4] ; Longo, E. [3, 4] ; Araujo-Moreira, F. M. [2]
Total Authors: 4
[1] Univ Fed Paraiba, CCEN, Dept Fis, BR-58051970 Joao Pessoa, Paraiba - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Fed Sao Carlos, Dept Chem, LIEC, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Estadual Paulista, UNESP, Inst Chem, BR-14801907 Araraquara, SP - Brazil
Total Affiliations: 4
Document type: Journal article
Source: JETP LETTERS; v. 102, n. 6, p. 383-386, SEP 2015.
Web of Science Citations: 5

We present measurements of resistivity rho in highly oriented LaNiO3 films grown on LaAlO3 substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal rho(T) ae T (3/2) dependence for the entire temperature interval (20 K T 300 K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy h omega (sf) a parts per thousand integral 2.1 meV) triggered by spin-density wave propagating through the interface boundary of LaNiO3/LaAlO3 sandwich. (AU)

FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 14/01371-5 - Obtention of memories with LaNiO3 and LaNiO3/BaTiO3 using PLD
Grantee:Leonélio Cichetto Junior
Support type: Scholarships in Brazil - Post-Doctorate