Scaling like behaviour of resistivity observed in LaNiO3 thin films grown on SrTiO3 substrate by pulsed laser deposition

Author(s)

Sergeenkov, S. ^{[1, 2]} ; Cichetto, Jr., L. ^{[1, 3, 4]} ; Zampieri, M. ^[3] ; Longo, E. ^{[3, 4]} ; Araujo-Moreira, F. M. ^[1]

Affiliation

^[1] Univ Fed Sao Carlos, Dept Fis, BR-13560 Sao Carlos, SP - Brazil

^[2] Univ Fed Paraiba, CCEN, Dept Fis, BR-58051970 Joao Pessoa, Paraiba - Brazil

^[3] Univ Fed Sao Carlos, LIEC Dept Chem, BR-13560 Sao Carlos, SP - Brazil

^[4] Univ Estadual Paulista, UNESP, Inst Chem, BR-14801907 Araraquara, SP - Brazil

• Document type: Journal article
• Source: JOURNAL OF PHYSICS-CONDENSED MATTER; v. 27, n. 48 DEC 9 2015.
• Web of Science Citations: 5

Abstract

We discuss the origin of the temperature dependence of resistivity. observed in highly oriented LaNiO3 thin films grown on SrTiO3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve rho(T, d) proportional to {[}T/T-sf(d)](3/2) for the entire temperature interval (20 < K < T< 300 K) with T-sf(d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaNiO3/SrTiO3 heterostructure. (AU)

• FAPESP's process: 14/01371-5 - Obtention of memories with LaNiO3 and LaNiO3/BaTiO3 using PLD
• Grantee: Leonélio Cichetto Junior
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC