| Full text | |
| Author(s): |
Felipe Souza Oliveira
[1]
;
Ana Carolina Favero
[1]
;
Sergio Tuan Renosto
[1]
;
Mário Sérgio da Luz
;
Carlos Alberto Moreira dos Santos
[1]
Total Authors: 5
|
| Affiliation: | [1] Univ Sao Paulo, Escola Engn Lorena, BR-12602810 Lorena, SP - Brazil
Total Affiliations: 2
|
| Document type: | Journal article |
| Source: | MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 21, n. 4 2018-05-03. |
| Abstract | |
The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach. (AU) | |
| FAPESP's process: | 16/00335-0 - Anual project for application of the institutional tecnical reserve of the EEL-USP 2014-2015 |
| Grantee: | Carlos Alberto Moreira dos Santos |
| Support Opportunities: | Research Grants - Technical Reserve for Institutional Research Infrastructure |
| FAPESP's process: | 09/54001-2 - Acquisition of cryogen-free equipment for the characterization of magnetic properties by vibrating sample magnetometry |
| Grantee: | Carlos Alberto Moreira dos Santos |
| Support Opportunities: | Multi-user Equipment Program |