Advanced search
Start date
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Ultralow and anisotropic thermal conductivity in semiconductor As2Se3

Full text
Gonzalez-Romero, Robert L. [1, 2, 3] ; Antonelli, Alex [1, 2] ; Chaves, Anderson S. [1, 2] ; Melendez, Juan J. [4, 5]
Total Authors: 4
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, Campinas, SP - Brazil
[2] Univ Estadual Campinas, Ctr Computat Engn & Sci, Campinas, SP - Brazil
[3] Univ Pablo Olavide, Dept Sistemas Fis Quim & Nat, Seville - Spain
[4] Univ Extremadura, Dept Fis, Avda Elvas S-N, Badajoz 06007 - Spain
[5] Inst Computac Cient Avanzada Extremadura ICCAEx, Badajoz - Spain
Total Affiliations: 5
Document type: Journal article
Source: Physical Chemistry Chemical Physics; v. 20, n. 3, p. 1809-1816, JAN 21 2018.
Web of Science Citations: 6

An ultralow lattice thermal conductivity of 0.14 W m(-1) K-1 along the ( b) over right arrow axis of As2Se3 single crystals was obtained at 300 K using first-principles calculations involving density functional theory and the resolution of the Boltzmann transport equation. This ultralow lattice thermal conductivity arises from the combination of two mechanisms: (1) a cascade-like fall of the low-lying optical modes, which results in avoided crossings of these with the acoustic modes, low sound velocities and increased scattering rates of the acoustic phonons; and (2) the repulsion between the lone-pair electrons of the As cations and the valence p orbitals of the Se anions, which leads to an increase in the anharmonicity of the bonds. The physical origins of these mechanisms lie in the nature of the chemical bonding in the material and its strong anisotropy. These results, whose validity has been addressed by comparison with SnSe, for which excellent agreement between the theoretical predictions and the experiments is achieved, point out that As2Se3 could exhibit improved thermoelectric properties. (AU)

FAPESP's process: 13/08293-7 - CCES - Center for Computational Engineering and Sciences
Grantee:Munir Salomao Skaf
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 13/14065-7 - A First-Principles Study of Electronic, Structural, and Transport Properties of Clathrates for Thermoelectric Applications
Grantee:Robert Luis González Romero
Support type: Scholarships in Brazil - Post-Doctorate
FAPESP's process: 15/26434-2 - Study of the electronic, structural, and transport properties of materials for thermoelectric applications via ab initio calculations
Grantee:Anderson Silva Chaves
Support type: Scholarships in Brazil - Post-Doctorate