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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Deformation Mechanisms of Vertically Stacked WS2/MoS2 Heterostructures: The Role of Interfaces

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Susarla, Sandhya [1] ; Manimunda, Praveena [2] ; Jaques, Ygor Morais [1, 3, 4] ; Hachtel, Jordan A. [5] ; Idrobo, Juan Carlos [5] ; Amnulla, Syed Asif Syed [2] ; Galvao, Douglas Soares [3, 4] ; Tiwary, Chandra Sekhar [1, 6] ; Ajayan, Pulickel M. [1]
Total Authors: 9
[1] Rice Univ, Mat Sci & Nanoengn, Houston, TX 77005 - USA
[2] Bruker Nano Surfaces, Minneapolis, MN 55344 - USA
[3] Univ Estadual Campinas, Appl Phys Dept, UNICAMP, BR-13083859 Campinas, SP - Brazil
[4] Univ Estadual Campinas, Ctr Computat Engn & Sci, BR-13083861 Campinas, SP - Brazil
[5] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 - USA
[6] Indian Inst Technol, Mat Sci & Engn, Gandhinagar 382355 - India
Total Affiliations: 6
Document type: Journal article
Source: ACS NANO; v. 12, n. 4, p. 4036-4044, APR 2018.
Web of Science Citations: 13

The mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situ Raman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS2/MoS2 heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS2/MoS2 heterostructures. (AU)

FAPESP's process: 16/12341-5 - Effect of Contaminants on Wettability Properties of 2D Materials
Grantee:Ygor Morais Jaques
Support type: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 13/08293-7 - CCES - Center for Computational Engineering and Sciences
Grantee:Munir Salomao Skaf
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC