Structural and optical temperature-dependent properties of PbS thin films deposited by radio frequency sputtering

Author(s)

Clemente da Silva Filho, Jose Maria ^[1] ; Marques, Francisco Chagas ^[1]

Affiliation

^[1] Univ Estadual Campinas, Gleb Wataghin Inst Phys, UNICAMP, Rua Sergio Buarque de Holanda 777, Cidade Univ, BR-13083859 Campinas, SP - Brazil

• Document type: Journal article
• Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; v. 91, p. 188-193, MAR 2019.
• Web of Science Citations: 2

Abstract

Lead sulfide (PbS) thin films deposited by radio frequency (RF) sputtering, in the 50-300 degrees C temperature range, were the subject of our investigation. We characterized the influence of deposition temperature on their structural, morphological, and optical properties by x-ray diffraction (XRD), atomic force microscopy (AFM), and UV-visible and Raman spectroscopy. XRD revealed that a transition from an amorphous to a crystalline structure occurs in the 200-250 degrees C temperature range. One was also able to observe an increase in grain size (determined by AFM), as the temperature increased. We also found that a broad range of band gaps (from 0.72 eV to 2.12 eV) might also be obtained by varying the deposition temperature. (AU)

• FAPESP's process: 12/10127-5 - Research and development of nanostructured materials for electronic and surface physics applications
• Grantee: Fernando Alvarez
• Support Opportunities: Research Projects - Thematic Grants