| Full text | |
| Author(s): |
Total Authors: 2
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| Affiliation: | [1] Univ Estadual Campinas, Gleb Wataghin Inst Phys, UNICAMP, Rua Sergio Buarque de Holanda 777, Cidade Univ, BR-13083859 Campinas, SP - Brazil
Total Affiliations: 1
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| Document type: | Journal article |
| Source: | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; v. 91, p. 188-193, MAR 2019. |
| Web of Science Citations: | 2 |
| Abstract | |
Lead sulfide (PbS) thin films deposited by radio frequency (RF) sputtering, in the 50-300 degrees C temperature range, were the subject of our investigation. We characterized the influence of deposition temperature on their structural, morphological, and optical properties by x-ray diffraction (XRD), atomic force microscopy (AFM), and UV-visible and Raman spectroscopy. XRD revealed that a transition from an amorphous to a crystalline structure occurs in the 200-250 degrees C temperature range. One was also able to observe an increase in grain size (determined by AFM), as the temperature increased. We also found that a broad range of band gaps (from 0.72 eV to 2.12 eV) might also be obtained by varying the deposition temperature. (AU) | |
| FAPESP's process: | 12/10127-5 - Research and development of nanostructured materials for electronic and surface physics applications |
| Grantee: | Fernando Alvarez |
| Support Opportunities: | Research Projects - Thematic Grants |