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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Numerical simulations of the linear drift memristor model

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Author(s):
Ferrari, Fabiano A. S. [1, 2] ; Prado, Thiago L. [1] ; da Silva, Thiago F. P. [1] ; dos Santos, Clara M. [1] ; Santos, Moises S. [3] ; de Souza, Silvio L. T. [4] ; Iarosz, Kelly C. [5] ; Szezech, Jr., Jose D. [2, 6] ; Batista, Antonio M. [2, 6]
Total Authors: 9
Affiliation:
[1] Fed Univ Jequitinhonha & Mucuris Valleys, Inst Engn Sci & Technol, Janauba - Brazil
[2] Univ Estadual Ponta Grossa, Grad Program Sci, Ponta Grossa - Brazil
[3] Univ Fed Parana, Dept Phys, Curitiba, Parana - Brazil
[4] Univ Fed Sao Joao del Rei, Campus Ctr Oeste, Divinopolis - Brazil
[5] Univ Sao Paulo, Inst Phys, Sao Paulo - Brazil
[6] Univ Estadual Ponta Grossa, Dept Math & Stat, Ponta Grossa - Brazil
Total Affiliations: 6
Document type: Journal article
Source: EUROPEAN PHYSICAL JOURNAL PLUS; v. 134, n. 3 MAR 15 2019.
Web of Science Citations: 0
Abstract

.Memristor is a passive element theoretically proposed by Leon Chua in the 1970's. It started to receive attention after 2008, when researchers from the HP Labs presented a device with memristive properties. Since then, several models have been proposed to describe the memristor. In this work, we analyze the linear drift model, comparing the numerical solutions with analytical solutions and SPICE simulations. We demonstrate that different solutions can be found depending on the method and parameter set. (AU)

FAPESP's process: 15/07311-7 - Dynamic behaviour of neural networks
Grantee:Kelly Cristiane Iarosz
Support Opportunities: Scholarships in Brazil - Post-Doctoral