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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

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Author(s):
Moraes, F. C. D. [1] ; Ullah, S. [1, 2] ; Balanta, M. A. G. [3] ; Iikawa, F. [3] ; Danilov, Y. A. [4] ; Dorokhin, V, M. ; Vikhrova, O. V. [5] ; Zvonkov, B. N. [5] ; Hernandez, F. G. G. [1]
Total Authors: 9
Affiliation:
[1] Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo, SP - Brazil
[2] Gomal Univ, Dept Phys, Dera Ismail Khan 29220, KP - Pakistan
[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[4] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950 - Russia
[5] Dorokhin, M., V, Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950 - Russia
Total Affiliations: 5
Document type: Journal article
Source: SCIENTIFIC REPORTS; v. 9, MAY 13 2019.
Web of Science Citations: 0
Abstract

Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period. (AU)

FAPESP's process: 16/16365-6 - Nanostructures of III-V semiconductors and their optical properties
Grantee:Fernando Iikawa
Support type: Regular Research Grants
FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support type: Research Projects - Thematic Grants