Advanced search
Start date
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

Full text
Chaves, Michel [1] ; Ramos, Raul [1] ; Martins, Everson [1] ; Rangel, Elidiane Cipriano [1] ; da Cruz, Nilson Cristino [1] ; Durrant, Steven Frederick [1] ; Ribeiro Bortoleto, Jose Roberto [1]
Total Authors: 7
[1] Univ Estadual Paulista, UNESP, Inst Ciencia & Tecnol Sorocaba, Ave Tres Marco 511, BR-18087180 Sorocaba, SP - Brazil
Total Affiliations: 1
Document type: Journal article
Web of Science Citations: 1

Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radio frequency (rf) magnetron sputtering from a metallic Zn-Al (5 at. %) target at room temperature. The morphological, structural, electrical and optical properties of the films were studied as a function of the sputtering pressure, which was varied from 0.1 to 6.7 Pa. X-ray diffraction (XRD) analyses revealed that the films obtained were polycrystalline, having a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, the crystallite size increased as a function of sputtering pressure. Owing to the re-sputtering of the Zn atoms from the growing film, the aluminum concentration presented a maximum value of 13 at. %. At pressures close to 0.16 Pa, we obtained films with values of electrical resistivity and mobility of 2.8 10(-3) Omega cm and 17 cm(2)/Vs, respectively. Finally, our results indicate that the structure zone diagram proposed by Thornton and later modified by Kluth does not fully predict the structural/morphological behavior of the AZO films, since plasma interactions must also be taken into account. With the methodology used, transparent conductive electrodes can be deposited on substrates at low temperatures. (AU)

FAPESP's process: 14/21594-9 - Characterization of surfaces chlorinated in plasmas and chlorinated thin films deposited in plasmas
Grantee:Steven Frederick Durrant
Support type: Regular Research Grants