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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Characterization of amorphous carbon films by PECVD and plasma ion implantation: The role of fluorine and sulfur doping

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de Oliveira Neto, Antonio M. [1, 2] ; Schreiner, Wido H. [3] ; Justo, Joao F. [1] ; de Oliveira, Alexandre M. [1, 2] ; Rangel, Elidiane C. [4] ; Durrant, Steven F. [4]
Total Authors: 6
[1] Univ Sao Paulo, Escola Politecn, BR-05508900 Sao Paulo, SP - Brazil
[2] Fed Inst Sao Paulo, Maxwell Lab, BR-08673010 Suzano, SP - Brazil
[3] Univ Fed Parana, Dept Phys, BR-8153190 Curitiba, Parana - Brazil
[4] Sao Paulo State Univ UNESP, Technol Plasmas Lab, BR-18087180 Sorocaba, SP - Brazil
Total Affiliations: 4
Document type: Journal article
Source: Materials Chemistry and Physics; v. 227, p. 170-175, APR 1 2019.
Web of Science Citations: 0

We carry an investigation on the structural and optical properties of amorphous carbon films, containing fluorine and sulfur in their composition, grown by plasma enhanced chemical vapor (PECVD) and plasma immersion ion implantation deposition (PIIID) techniques. The films were grown by a combination of acetylene, sulfur hexafluoride, and argon gases. The chemical and optical properties of the films, prepared with different gas concentrations and voltages on the substrate, are analyzed by X-ray photoelectron spectroscopy and Fourier-transform infrared absorption spectroscopy. The results indicate that the application of negative pulses in the lower electrode allows greater incorporation of fluorine atoms with a smaller amount of hexafluoride gas at the reactor feed. Additionally, sulfur incorporation has been detected in the films in concentrations up to 18%. The influence of the incorporation of fluorine and sulfur on the optical properties is also explored. (AU)

FAPESP's process: 17/15853-0 - Characterization of Complex Thin Films Obtained by PECVD and the Deposition of Thin Films on Porous Substrates
Grantee:Steven Frederick Durrant
Support type: Regular Research Grants