| Full text | |
| Author(s): |
Total Authors: 4
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| Affiliation: | [1] Sao Paulo State Univ, Dept Phys, UNESP, FC & Grad Program Mat Sci & Technol POSMAT, Bauru, SP - Brazil
Total Affiliations: 1
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| Document type: | Journal article |
| Source: | Materials Research Bulletin; v. 120, DEC 2019. |
| Web of Science Citations: | 0 |
| Abstract | |
Er-doped tin dioxide thin films, deposited on glass substrates by a combination of sol-gel and resistive evaporation techniques, are investigated. The sol-gel route is used for powder preparation, which serves as material source for resistively evaporated thin films. The annealing temperature influences the Er3+ location, that reflects on the photoluminescence (PL) related to H-2(11/2) -> I-4(15/2) and S-4(3/2 )-> I-4(15/2) and S-4(3/2) -> (I15/2Er3+)-I-4 transitions. The lower annealing temperature, 300 degrees C, leads to PL emission, which vanishes for higher annealing temperatures. Annealing temperature above 300 degrees C enlarges the crystallites and allows diffusion of Er ions into the sample, increasing the population of substituted Sn sites. Then, the population of grain boundary located luminescent sites is decreased, leading to higher conductivity concomitant with absence of PL signal. Evaporated SnO2 films have the advantage of a stable electrical signal and the deposition on hydrophobic surfaces. Emission of evaporated SnO2 on GaAs substrates is also shown, yielding the substrate influence. (AU) | |
| FAPESP's process: | 16/12216-6 - Heterojunctions of SnO2 for applications in optoelectronic devices:1) GaAs/SnO2, 2) grafeno/SnO2 |
| Grantee: | Diego Henrique de Oliveira Machado |
| Support Opportunities: | Scholarships in Brazil - Doctorate |
| FAPESP's process: | 17/18916-2 - Optimization of the Growth Process of Co3O4 Films for Photovoltaic and Photocatalytic Applications |
| Grantee: | Jose Humberto Dias da Silva |
| Support Opportunities: | Regular Research Grants |