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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Quantitative comparison of Anderson impurity solvers applied to transport in quantum dots

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Author(s):
de Souza Melo, Bruno Max [1] ; da Silva, Luis G. G. V. Dias [2] ; Rocha, Alexandre Reily [3] ; Lewenkopf, Caio [1]
Total Authors: 4
Affiliation:
[1] Univ Fed Fluminense, Inst Fis, BR-24210346 Niteroi, RJ - Brazil
[2] Univ Sao Paulo, Inst Fis, Rua Matao 1371, BR-05508090 Sao Paulo, SP - Brazil
[3] Sao Paulo State Univ UNESP, Inst Fis Teor, Sao Paulo, SP - Brazil
Total Affiliations: 3
Document type: Journal article
Source: JOURNAL OF PHYSICS-CONDENSED MATTER; v. 32, n. 9 FEB 27 2020.
Web of Science Citations: 1
Abstract

We study the single impurity Anderson model (SIAM) using the equations of motion method (EOM), the non-crossing approximation (NCA), the one-crossing approximation (OCA), and Wilson's numerical renormalization group (NRG). We calculate the density of states and the linear conductance focusing on their dependence on the chemical potential and on the temperature paying special attention to the Kondo and Coulomb blockade regimes for a large range of model parameters. We report that some standard approximations based on the EOM technique display a rather unexpected poor behavior in the Coulomb blockade regime even at high temperatures. Our study offers a critical comparison between the different methods as well as a detailed compilation of the shortcomings and limitations due the approximations involved in each technique, thus allowing for a cost-benefit analysis of the different solvers that considers both numerical precision and computational performance. (AU)

FAPESP's process: 16/01343-7 - ICTP South American Institute for Fundamental Research: a regional center for theoretical physics
Grantee:Nathan Jacob Berkovits
Support Opportunities: Special Projects
FAPESP's process: 16/18495-4 - Electronic transport and correlation effects in topological materials
Grantee:Luis Gregório Godoy de Vasconcellos Dias da Silva
Support Opportunities: Regular Research Grants
FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
Grantee:Adalberto Fazzio
Support Opportunities: Research Projects - Thematic Grants