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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Impact of defects on the electrical properties of BiFeO3 thin films

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Author(s):
Reis, S. P. [1, 2] ; Araujo, E. B. [1]
Total Authors: 2
Affiliation:
[1] Sao Paulo State Univ, Dept Phys & Chem, Ilha Solteira - Brazil
[2] Fed Inst Educ Sci & Technol Sao Paulo, Votuporanga - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Ferroelectrics; v. 556, n. 1, SI, p. 70-78, FEB 17 2020.
Web of Science Citations: 0
Abstract

The impact of defects on the electrical properties of bismuth ferrite thin films has been studied. Secondary phases and oxygen vacancies were the main defects considered. Thin films with secondary phases show higher conductivities than single-phase films. Monophasic films annealed in oxygen atmosphere shows lower conductivity than the non-annealed film. For selected thin film with secondary phase, the relaxation in the grain boundary was predominant with activation energy eV, suggesting the first ionization oxygen vacancies as the relaxation mechanism in the studied films. The electric field effect on relaxation processes was similarly to Arrhenius thermally activated process. (AU)

FAPESP's process: 17/13769-1 - Multiferroic and ferroelectric materials for energy converters: synthesis, properties, phenomenology and applications
Grantee:José Antonio Eiras
Support Opportunities: Research Projects - Thematic Grants