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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Electronic mechanism for resistive switching in metal/insulator/metal nanodevices

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Author(s):
Raebiger, Hannes [1, 2] ; Padilha, Antonio Claudio M. [1, 3, 4] ; Rocha, Alexandre Reily [5] ; Dalpian, Gustavo M. [1]
Total Authors: 4
Affiliation:
[1] Univ Fed ABC, Ctr Ciencias Nat & Humanas, Santo Andre, SP - Brazil
[2] Yokohama Natl Univ, Dept Phys, Yokohama, Kanagawa - Japan
[3] Brazillian Nanotechnol Natl Lab LNNano CNPEM, BR-13083970 Campinas, SP - Brazil
[4] Flextron Inst Tecnol, BR-13918900 Jaguariuna - Brazil
[5] Univ Estadual Paulista, Inst Fis Teor, Sao Paulo, SP - Brazil
Total Affiliations: 5
Document type: Journal article
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 53, n. 29 JUL 15 2020.
Web of Science Citations: 0
Abstract

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator `storage medium', characterized by different `band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator `storage medium'. (AU)

FAPESP's process: 11/21719-8 - Ab initio simulations of memristive systems: from the raw material to the device
Grantee:Antonio Cláudio Michejevs Padilha
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 13/22577-8 - Collaboration of UFABC and Yokohama National University for the theory of nanostructures at interfaces and embedded inside bulk materials
Grantee:Gustavo Martini Dalpian
Support type: Research Grants - Visiting Researcher Grant - International
FAPESP's process: 15/05830-7 - Ab initio simulations of memristive systems: from the raw material to the device
Grantee:Antonio Cláudio Michejevs Padilha
Support type: Scholarships abroad - Research Internship - Doctorate