| Full text | |
| Author(s): |
Yojo, Leonardo S.
[1]
;
Rangel, Ricardo C.
[1, 2]
;
Sasaki, Katia R. A.
[1]
;
Ortiz-Conde, Adelmo
[3]
;
Martino, Joao A.
[1]
Total Authors: 5
|
| Affiliation: | [1] Univ Sao Paulo, LSI PSI USP, Sao Paulo - Brazil
[2] Fac Tecnol Sao Paulo, FATEC SP, Sao Paulo - Brazil
[3] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080 - Venezuela
Total Affiliations: 3
|
| Document type: | Journal article |
| Source: | Solid-State Electronics; v. 169, JUL 2020. |
| Web of Science Citations: | 0 |
| Abstract | |
A simple model is proposed for the Back Enhanced SOI MOSFET in triode region. This model is based on a conventional MOSFET model in series with resistors and antiparallel Schottky diodes. A robust parameter extraction method, based on lateral optimization, is also presented. The dependence of the extracted parameters with the back-gate bias is studied. (AU) | |
| FAPESP's process: | 18/01568-4 - BE SOI MOSFET transistors optimization for biosensor platform application |
| Grantee: | Leonardo Shimizu Yojo |
| Support Opportunities: | Scholarships in Brazil - Doctorate |