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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Impact of Schottky contacts on p-type back enhanced SOI MOSFETs

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Author(s):
Yojo, Leonardo S. [1] ; Rangel, Ricardo C. [1, 2] ; Sasaki, Katia R. A. [1] ; Ortiz-Conde, Adelmo [3] ; Martino, Joao A. [1]
Total Authors: 5
Affiliation:
[1] Univ Sao Paulo, LSI PSI USP, Sao Paulo - Brazil
[2] Fac Tecnol Sao Paulo, FATEC SP, Sao Paulo - Brazil
[3] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080 - Venezuela
Total Affiliations: 3
Document type: Journal article
Source: Solid-State Electronics; v. 169, JUL 2020.
Web of Science Citations: 0
Abstract

A simple model is proposed for the Back Enhanced SOI MOSFET in triode region. This model is based on a conventional MOSFET model in series with resistors and antiparallel Schottky diodes. A robust parameter extraction method, based on lateral optimization, is also presented. The dependence of the extracted parameters with the back-gate bias is studied. (AU)

FAPESP's process: 18/01568-4 - BE SOI MOSFET transistors optimization for biosensor platform application
Grantee:Leonardo Shimizu Yojo
Support Opportunities: Scholarships in Brazil - Doctorate