| Full text | |
| Author(s): |
Garcia-Basabe, Yunier
[1]
;
Gordo, Vanessa Orsi
[2]
;
Daminelli, Lara M.
[1]
;
Mendoza, Cesar D.
[3]
;
Vicentin, Flavio C.
[4]
;
Matusalem, Filipe
[5]
;
Rocha, Alexandre R.
[5]
;
de Matos, Christiano J. S.
[2]
;
Larrude, Dunieskys G.
[2]
Total Authors: 9
|
| Affiliation: | [1] Univ Fed Integracao Latino Amer, UNILA, BR-85867970 Foz Do Iguacu - Brazil
[2] Univ Prebiteriana Mackenzie, MackGraphe Graphene & Nanomat Res Ctr, BR-01302907 Sao Paulo - Brazil
[3] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22451900 Rio De Janeiro - Brazil
[4] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Synchrotron Light Lab LNLS, BR-13083970 Campinas, SP - Brazil
[5] Sao Paulo State Univ UNESP, Inst Fis Teor, BR-01140070 Sao Paulo - Brazil
Total Affiliations: 5
|
| Document type: | Journal article |
| Source: | Applied Surface Science; v. 541, MAR 1 2021. |
| Web of Science Citations: | 0 |
| Abstract | |
The band alignment and the interfacial electronic coupling of van der Waals heterojunctions formed by the Poly {[}3-hexylthiophene-2,5-diyl] (P3HT) semiconductor polymer and the mechanically exfoliated black phosphorous (BP) multilayers were investigated using different spectroscopies techniques. The energy band alignment was assessed using Ultraviolet (UPS) and X-ray (XPS) photoelectron spectroscopies. The result of this analysis shows that the P3HT-BP interface presents a type I band alignment with conduction band minimum and the valence band maximum located in the BP layer. A valence band offset of 0.45 eV and a conduction band offset of 1.25 eV parameters were found. Near-Edge X-ray Absorption Fine Structure (NEXAFS) and resonant Auger (RAS) synchrotron-based spectroscopies were used to investigate the interfacial electronic coupling between BP and P3HT. Interfacial charge transfer times obtained from core hole clock approach and using the Sls core-hole lifetime as a reference time were used as quantitative parameters to measure the degree of electronic coupling. We found that the pi{*}(S=C) electronic state is the faster electron delocalization pathway from the P3HT to the BP conduction band and therefore there is a strong electronic coupling between these states. This result was supported from density functional theoretical calculations. (AU) | |
| FAPESP's process: | 18/08988-9 - Towards high speed optical devices by exploiting the unique properties of 2D materials |
| Grantee: | Hugo Luis Fragnito |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 15/11779-4 - Plasmonic and nonlinear effects in graphene coupled to optical waveguides |
| Grantee: | Christiano José Santiago de Matos |
| Support Opportunities: | Research Projects - Thematic Grants |
| FAPESP's process: | 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties |
| Grantee: | Adalberto Fazzio |
| Support Opportunities: | Research Projects - Thematic Grants |