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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes

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Author(s):
Cardozo de Oliveira, E. R. [1] ; Naranjo, A. [1] ; Pfenning, A. [2, 3] ; Lopez-Richard, V [1] ; Marques, G. E. [1] ; Worschech, L. [2, 3] ; Hartmann, F. [2, 3] ; Hofling, S. [2, 3] ; Teodoro, M. D. [1]
Total Authors: 9
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Wurzburg, Rontgen Ctr Complex Mat Syst RCCM, D-97074 Wurzburg - Germany
[3] Univ Wurzburg, Tech Phys, Phys Inst, D-97074 Wurzburg - Germany
Total Affiliations: 3
Document type: Journal article
Source: PHYSICAL REVIEW APPLIED; v. 15, n. 1 JAN 22 2021.
Web of Science Citations: 0
Abstract

We study the magneto-transport and magnetoelectroluminescence properties of purely n-doped GaAs/Al0.6Ga0.4 As resonant-tunneling diodes with an In0.15Ga0.85 As quantum well and an emitter prewell. Before the resonant-current condition, magneto-transport measurements reveal charge-carrier densities comparable for diodes with and without the emitter prewell. Landau-level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge-carrier buildup. Our findings show that magnetoelectroluminescence spectroscopy techniques provide useful insights into the charge-carrier dynamics in resonant-tunneling diodes and comprise a versatile tool to complement magneto-transport techniques. This approach might pave the way for the development of potentially more efficient optoelectronic resonant-tunneling devices by, e.g., monitoring voltage-dependent charge accumulation for the improvement of built-in fields and hence the maximization of the photodetector efficiency and/or the minimization of optical losses. (AU)

FAPESP's process: 18/01914-0 - Functionalizing the optical emission in quantum tunneling nanostructures in different spectral intervals
Grantee:Marcio Daldin Teodoro
Support type: Regular Research Grants
FAPESP's process: 13/18719-1 - Electronic carriers dynamics in semiconductor nanostructures
Grantee:Marcio Daldin Teodoro
Support type: Research Grants - Young Investigators Grants
FAPESP's process: 14/02112-3 - Optical and transport phenomena in nano-devices
Grantee:Victor Lopez Richard
Support type: Regular Research Grants