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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Structural and electronic properties of realistic two-dimensional amorphous topological insulators

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Author(s):
Focassio, Bruno [1, 2] ; Schleder, Gabriel R. [1, 2] ; Costa, Marcio [1, 3] ; Fazzio, Adalberto [1, 2] ; Lewenkopf, Caio [3]
Total Authors: 5
Affiliation:
[1] CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083970 Campinas, SP - Brazil
[2] Fed Univ ABC UFABC, BR-09210580 Santo Andre, SP - Brazil
[3] Univ Fed Fluminense, Inst Fis, BR-24210346 Niteroi, RJ - Brazil
Total Affiliations: 3
Document type: Journal article
Source: 2D MATERIALS; v. 8, n. 2 APR 2021.
Web of Science Citations: 1
Abstract

We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ a realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find that the robustness of the topological phase is associated with the spin-orbit coupling strength and size of the pristine topological gap. Using recursive non-equilibrium Green's function, we study the electronic transport properties of nanoribbons devices with lengths comparable to experimentally synthesized materials. We find a 2e(2)/h conductance plateau within the topological gap and an onset of Anderson localization at the trivial insulator phase. (AU)

FAPESP's process: 17/18139-6 - Machine learning for Materials Science: 2D materials discovery and design
Grantee:Gabriel Ravanhani Schleder
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 16/14011-2 - Electronic properties: interfaces between topological insulators (TI-TI)
Grantee:Marcio Jorge Teles da Costa
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
Grantee:Adalberto Fazzio
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 19/04527-0 - Interface between crystalline topological insulators and 2D-trivial materials: defect proximity study
Grantee:Bruno Focassio
Support Opportunities: Scholarships in Brazil - Doctorate (Direct)