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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Discovery of higher-order topological insulators using the spin Hall conductivity as a topology signature

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Author(s):
Costa, Marcio [1, 2, 3] ; Schleder, Gabriel R. [1, 3] ; Mera Acosta, Carlos [1] ; Padilha, Antonio C. M. [3] ; Cerasoli, Frank [4, 5] ; Buongiorno Nardelli, Marco [4, 5] ; Fazzio, Adalberto [1, 3]
Total Authors: 7
Affiliation:
[1] Fed Univ ABC, Ctr Nat & Human Sci, Santo Andre, SP - Brazil
[2] Fluminense Fed Univ, Dept Phys, Niteroi, RJ - Brazil
[3] CNPEM, Brazilian Nanotechnol Natl Lab LNNano, Campinas - Brazil
[4] Univ North Texas, Dept Phys, Denton, TX 76203 - USA
[5] Univ North Texas, Dept Chem, Denton, TX 76203 - USA
Total Affiliations: 5
Document type: Journal article
Source: NPJ COMPUTATIONAL MATERIALS; v. 7, n. 1 APR 12 2021.
Web of Science Citations: 1
Abstract

The discovery and realization of topological insulators, a phase of matter which hosts metallic boundary states when the d-dimension insulating bulk is confined to (d - 1)-dimensions, led to several potential applications. Recently, it was shown that protected topological states can manifest in (d - 2)-dimensions, such as hinge and corner states for three- and two-dimensional systems, respectively. These nontrivial materials are named higher-order topological insulators (HOTIs). Here we show a connection between spin Hall effect and HOTIs using a combination of ab initio calculations and tight-binding modeling. The model demonstrates how a non-zero bulk midgap spin Hall conductivity (SHC) emerges within the HOTI phase. Following this, we performed high-throughput density functional theory calculations to find unknown HOTIs, using the SHC as a criterion. We calculated the SHC of 693 insulators resulting in seven stable two-dimensional HOTIs. Our work guides novel experimental and theoretical advances towards higher-order topological insulator realization and applications. (AU)

FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
Grantee:Adalberto Fazzio
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 16/14011-2 - Electronic properties: interfaces between topological insulators (TI-TI)
Grantee:Marcio Jorge Teles da Costa
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 17/18139-6 - Machine learning for Materials Science: 2D materials discovery and design
Grantee:Gabriel Ravanhani Schleder
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 18/11856-7 - Interface-induced effects in quantum materials
Grantee:Carlos Augusto Mera Acosta
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 18/05565-0 - Weyl semi-metal surfaces
Grantee:Antonio Cláudio Michejevs Padilha
Support Opportunities: Scholarships in Brazil - Post-Doctoral