Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

Author(s)

Cruz, Alexsandro dos Santos E. da ^[1] ; Puydinger dos Santos, Marcos V. ^[1] ; Campanelli, Raul B. ^[1] ; Pagliuso, Pascoal G. ^[1] ; Bettini, Jefferson ^[2] ; Pirota, Kleber R. ^[1] ; Beron, Fanny ^[1]

Affiliation

^[1] Univ Campinas UNICAMP, Inst Phys Gleb Wataghin IFGW, BR-13083859 Campinas, SP - Brazil

^[2] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13085903 Campinas, SP - Brazil

• Document type: Journal article
• Source: NANOSCALE ADVANCES; v. 3, n. 11, p. 3251-3259, JUN 7 2021.
• Web of Science Citations: 0

Abstract

Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is Mn5Si3 nanowires encapsulated in an oxide shell, due to their low reactivity and large flexibility. In this work, we investigate the use of the one-step metallic flux nanonucleation method to easily grow manganese silicide single crystal oxide-protected nanowires by performing their structural and electrical characterization. We find that the fabrication method yields a room-temperature hexagonal crystalline structure with the c-axis along the nanowire. Moreover, the obtained nanowires are metallic at low temperature and low sensitive to a strong external magnetic field. Finally, we observe an unknown electron scattering mechanism for small diameters. In conclusion, the one-step metallic flux nanonucleation method yields intermetallic nanowires suitable for both integration in flexible nanoelectronics as well as low-dimensionality transport experiments. (AU)

• FAPESP's process: 17/10581-1 - Emergent phenomena in reduced dimension systems
• Grantee: Pascoal Jose Giglio Pagliuso
• Support Opportunities: Special Projects