This proposal aims at the production and characterization of single crystal semiconductor nanowires. The nanostructures of interest are semiconductor nanowires such as germanium and indium phosphide, both "classic" semiconductors with potential application in opto-nanoelectronic devices and which can be obtained by alternative routes such as the catalyzed vapor-liquid-solid growth mechanism. In order to improve the processes of growth, we intend to study some structural features and electronic-based devices built with a single nanowire or multiple nanowires. Electronic transport experiments should be conducted allowing the characterization of: the conduction mechanisms, the scattering processes of dominant carriers, the influence of structural disorder and surface transport mechanisms. We expect to contribute to the understanding of the physical processes involved in electron transport and the improvement of the production / application of nanowires as forming elements (building blocks) of nanoelectronic devices and nano-opto-electronics.
News published in Agência FAPESP Newsletter about the scholarship: