P-N junctions in III-V semiconductor nanowires: a platform for applied studies
Nanostructures of III-V semiconductors and their optical properties
Study of Field Induced Tunneling Effect Transistor (Tunnel-FET) fabricated on Sili...
Carlos L. Trallero Giner | Faculty of Physics/University of Havana - Cuba
Modeling of nanometric transistors for applications in analog circuits
Electron properties in nanostructures: metallic oxide nanowires