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Growth and caracterization of indium phosphide nanowires (InP)

Grant number: 13/02514-1
Support type:Scholarships in Brazil - Scientific Initiation
Effective date (Start): May 01, 2013
Effective date (End): April 30, 2015
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal researcher:Adenilson José Chiquito
Grantee:Sara Camelucci Carrocine Tognon
Home Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil

Abstract

This proposal aims to the production and characterization of monocrystalline InP semiconductor nanowires. The samples of interest, with potential application in Opto-nanoelectronic devices, should be obtained by condensation of the vapors of the starting materials at controlled temperatures by a metal-catalyzed vapor-liquid-solid mechanism. Once produced, different structural characterization techniques will be used (scanning transmission microscopy and x-ray diffraction) as a process of "feedback" with the aim of improving the process for obtaining the experimental samples as well as the understanding of the mechanism of growth. Thus, the proposed activities aimed at learning basic techniques for the preparation of nanowires and from this point, the improvement of the process in order to tune the experimental system for reproducibility in obtaining better quality structures. If possible, taking into account the success in obtaining InP nanowires, electronic devices based on them can be studied. (AU)

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